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Organic magnetoresistance based on hopping theory
  • ISSN号:1674-1056
  • 期刊名称:Chinese Physics B
  • 时间:2014.9
  • 页码:-
  • 分类:O511[理学—低温物理;理学—物理] TN92[电子电信—通信与信息系统;电子电信—信息与通信工程]
  • 作者机构:[1]School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
  • 相关基金:Project supported by the National Basic Research Program of China (Grant No. 2010CB923402), the National Natural Science Foundation of China (Grant Nos. 11174181 and 21161160445), and the Program of Introducing Talents of Discipline to Universities, China (Grant No. B 13029).
  • 相关项目:有机光电器件中的磁场效应和结构设计
中文摘要:

For the organic magnetoresistance(OMAR) effect, we suggest a spin-related hopping of carriers(polarons) based on Marcus theory. The mobility of polarons is calculated with the master equation(ME) and then the magnetoresistance(MR)is obtained. The theoretical results are consistent with the experimental observation. Especially, the sign inversion of the MR under different driving bias voltages found in the experiment is predicted. Besides, the effects of molecule disorder,hyperfine interaction(HFI), polaron localization, and temperature on the MR are investigated.

英文摘要:

For the organic magnetoresistance (OMAR) effect, we suggest a spin-related hopping of carriers (polarons) based on Marcus theory. The mobility of polarons is calculated with the master equation (ME) and then the magnetoresistance (MR) is obtained. The theoretical results are consistent with the experimental observation. Especially, the sign inversion of the MR under different driving bias voltages found in the experiment is predicted. Besides, the effects of molecule disorder, hyperfine interaction (HFI), polaron localization, and temperature on the MR are investigated.

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期刊信息
  • 《中国物理B:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编:欧阳钟灿
  • 地址:北京 中关村 中国科学院物理研究所内
  • 邮编:100080
  • 邮箱:
  • 电话:010-82649026 82649519
  • 国际标准刊号:ISSN:1674-1056
  • 国内统一刊号:ISSN:11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406