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Resistive switching characteristics of Ti/ZrO2/Pt RRAM device

ISSN号：1674-1056
期刊名称：《中国物理B：英文版》
时间：0
分类：TN25[电子电信—物理电子学] TQ174.758[化学工程—陶瓷工业;化学工程—硅酸盐工业]
作者机构：[1]Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071, China, [2]School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China, [3]Laboratory of Nano-fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Be~jing 100029, China, [4]Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, China
相关基金：Project supported by the National Basic Research Program of China （Grant No. 2011CBA00606）, the National Natural Science Foundation of China （Grant Nos. 61106106, 11304237, 61376099, and 11235008）, and the Specialized Research Fund for the Doctoral Program of Higher Education of China （Grant Nos. 20130203130002 and 20110203110012）.

作者：雷晓艺[1], 刘红侠[1], 高海霞[1], 杨哈妮[2], 王国明[3,4], 龙世兵[3], 马晓华[1,2], 刘明[3]

关键词：开关特性, 电阻式, 氧化锆, 空间电荷限制电流, 器件, 铂, 传导机制, 导通模式, resistive random access memory （RRAM）, resistive switching （RS）, conductive filament （CF）,compliance current

中文摘要：

In this paper, the bipolar resistive switching characteristic is reported in Ti/ZrO2/Pt resistive switching memory devices. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament composed of oxygen vacancies. The conduction mechanisms for low and high resistance states are dominated by the ohmic conduction and the trap-controlled space charge limited current(SCLC) mechanism, respectively. The effect of a set compliance current on the switching parameters is also studied: the low resistance and reset current are linearly dependent on the set compliance current in the log–log scale coordinate; and the set and reset voltage increase slightly with the increase of the set compliance current. A series circuit model is proposed to explain the effect of the set compliance current on the resistive switching behaviors.

英文摘要：

In this paper, the bipolar resistive switching characteristic is reported in Ti/ZrO2/Pt resistive switching memory de- vices. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament composed of oxygen vacancies. The conduction mechanisms for low and high resistance states are dominated by the ohmic conduc- tion and the trap-controlled space charge limited current （SCLC） mechanism, respectively. The effect of a set compliance current on the switching parameters is also studied： the low resistance and reset current are linearly dependent on the set compliance current in the log-log scale coordinate; and the set and reset voltage increase slightly with the increase of the set compliance current. A series circuit model is proposed to explain the effect of the set compliance current on the resistive switching behaviors.

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