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Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO3 thin films
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 时间：0
  • 分类：O484.1[理学—固体物理;理学—物理] TM221[电气工程—电工理论与新技术;一般工业技术—材料科学与工程]
  • 作者机构：[1]Institute for Advanced Materials, South China Normal University, Guangzhou 510006, China, [2]Laboratory of Solid State Microstructures, Nanjing Umverslty, Nanjing 210093, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （Grant Nos. 51072061, 51031004, and 51272078）, the Program for Changjiang Scholars and Innovative Research Team in University, and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China.
作者： 张飞[1], 林远彬[1], 吴昊[1], 苗青[1], 巩纪军[1], 陈继培[1], 吴素娟[1], 曾敏[1], 高兴森[1], 刘俊明[2]
关键词： 钛酸钡薄膜, 开关行为, 电阻, 切换, 管状, 可逆, 不对称, 电介质, ferroelectrics, resistive switching, RRAM, pulsed laser deposition
中文摘要：

In this work,the resistive switching behaviors of ferroelectrictric BaTiO3/La0.67Sr0.33MnO3heterostructures deposited by pulsed laser deposition are investigated.The BaTiO3films show both well-established P–E hysteresis loops,and asymmetric reversible diode-like resistive switching behaviors,involving no forming process.It is found that both the ON/OFF ratio and the stability of resistive switching are substantially dependent on operation voltage(Vmax).At a Vmaxof15 V,a large ON/OFF resistance ratio above 1000 is obtained at a Vmaxof 15 V,which is able to maintain stability up to70-switching cycles.The above resistive switching behaviors can be understood by modulating interface Schottky barriers as demonstrated by I–V curve fitting.

英文摘要：

In this work, the resistive switching behaviors of ferroelectrictric BaTiO3/La0.67Sr0.33MnO3 .heterostructures de- posited by pulsed laser deposition are investigated. The BaTiO3 films show both well-established P-E hysteresis loops, and asymmetric reversible diode-like resistive switching behaviors, involving no forming process. It is found that both the ON/OFF ratio and the stability of resistive switching are substantially dependent on operation voltage （Vmax）. At a Vmax of 15 V, a large ON/OFF resistance ratio above 1000 is obtained at a Vmax of 15 V, which is able to maintain stability up to 70-switching cycles. The above resistive switching behaviors can be understood by modulating interface Schottky barriers as demonstrated by I-V curve fitting.

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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406