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Hole Carriers Doping Effect on the Metal-Insulator Transition of N-Incorporated Vanadium Dioxide Thi
  • ISSN号：1932-7447
  • 期刊名称：Journal of Physical Chemistry C
  • 时间：2014.6.19
  • 页码：12837-12844
  • 相关项目：有机半导体薄膜的结构和性能的强磁场调变及同步辐射表征
作者： Ibrahim, Kurash|Yan, Wensheng|Xu, Faqiang|Wu, Ziyu|
同期刊论文项目
有机半导体薄膜的结构和性能的强磁场调变及同步辐射表征
期刊论文 12 会议论文 3
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