利用一种新型材料(E)-2-(2-(9H-fluoren-2-yl)vinyl)quinolato-Zinc(FHQZn)制备了一种新结构的黄光OLED,器件的结构为:indium-tinoxide(ITO)/4,4′,4″-{N,-(2-naphthyl)-N-phenylamino}-triphenylamine(2T-NATA)(15nm)/FHQZn(xnm)/4,4′-bis(2,2′-diphenylvinyl)-1,1′-biphenyl(DPVBi)(20nm)/2,2′,2″-(1,3,5-phenylene)tris(1-phenyl-1H-benzimidazole-(TPBi):6%factris(2-phenylpyridine)iridium(Ir(ppy)3)(45nm)/LiF(0.5nm)/Al,FHQZn作空穴传输层和黄色发光层,DPVBi作空穴阻挡层,TPBi中掺杂Ir(ppy)3作电子传输层;研究了发光层FHQZn的厚度对该器件的发光性能的影响。当FHQZn厚度x=25时,得到了效率和亮度最大的黄光器件,最大电流效率为1.31cd/A(at13V),最大亮度为5705cd/m^2(at14V),此时色坐标为(0.4,0.5516)。
The yellow organic light-emitting devices(OLEDs)were fabricated based on a novel yellow FHQZn as hole-transporting/emitting layer.The device structure fabricated is indium-tin oxide(ITO)/4,4 ,4″-{N,-(2-naphthyl)-N-phenylamino}-triphenylamine(2T-NATA)(15 nm)/FHQZn(x nm)/4,4 -bis(2,2 -diphenylvinyl)-1,1 -biphenyl(DPVBi)(20 nm)/2,2 ,2″-(1,3,5-phenylene)tris(1-phenyl-1H-benzimidazole-(TPBi):6% fac tris(2-phenylpyridine)iridium(Ir(ppy)3)(45 nm)/LiF(0.5 nm)/Al.FHQZn acts as a hole-transporting layer and the emissive layer, DPVBi as a hole-blocking layer, and (TPBi-Ir(ppy)a)as an electron-transporting layer. It is found that the thickness of FHQZn plays an important role on performance of the yellow OLED. When the thickness of FHQZn closes to 25 nm, the yellow OLED gets a maximum luminous efficiency of 1.31 cd/A (at 13 V), a maximum luminance of 5 705 cd/m^2(at 14 V), and commission internationale De L' eclairage coordinates of (0.4, 0. 551 6).