中文摘要：

以Hummers法获得的氧化石墨为原料制备氧化石墨烯,在不同温度下还原获得不同还原程度的还原氧化石墨烯,采用AFM、XRD、XPS和SEM对样品的结构、官能团及表面形貌进行表征,并采用涂覆法制备氧化石墨烯和还原氧化石墨烯气敏器件。结果表明,所得氧化石墨烯片厚度为1.08-1.72nm,为单层或双层氧化石墨烯。经100-250℃还原后,样品对应的底面间距由8.87nm减小至3.68nm;随还原程度增加,O/C原子比由0.43降至0.32;含氧官能团逐渐减少,其中C-OH含量明显降低;元件灵敏度降低。氧化石墨烯及其低还原程度产物的气敏元件对CH4和H2气体表现出较高的响应和灵敏度,S-GOS对CH4的灵敏度可达81%左右,对H2灵敏度可达77.2%。

英文摘要：

Graphene oxide（GOS）was prepared by graphite oxide（GO）which was prepared by the Hummers method,then roasted the GOS under different temperatures to get different reduction degrees of graphene oxide（RGOS）.Structure,functional groups,and surface topography of the samples were carried out by AFM,XRD,XPS,and SEM.The GOS and RGOS gas sensors were then fabricated by coating method.Results show that the Graphene oxide thickness is 1.08-1.72 nm,for single or double GOS.When graphene oxide was reduced from 100 to 250 ℃,the basal spacing of the samples were decreasing from 8.87 to 3.68nm;With the increasing of the reduction degrees,the O/C atomic ratio was decreasing from 0.43 to 0.32,showed that the oxygencontaining functional groups were gradually reduced and the C-OH functional group was decreased obviously,the gas sensitivity was also decreased.Graphene oxide and its lower reduced products show a good sensitivity to CH4 and H2gas.The GOS sensor had a best sensitivity to CH4 and H2gas which can reach 81% and 77.2%,respectively.