中文摘要：

利用自制的硅碳棒加热单晶生长炉，采用改进的坩埚下降法，在最高温度900℃，坩埚相对下降速度约为1．7cm／h条件下，生长出直径约为Ф50mm 的纯镁单晶。通过X射线衍射、金相观察和测量电导率等手段研究分析了所生长镁单晶的晶体质量。

英文摘要：

The Mg single crystal with the diameter of 50 mm has been successfully grown by improved Bridgman method, using the growth furnace which is heated with eight silicon carbon rods. The parameters are as follows： the highest temperature is 900 ℃, the descending speed of the crucible is about 1.7 cm/h. The grown Mg single crystal was analyzed by the X-ray diffraction and metallographic phase and electrical conductivity measurement.