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Photoelectric catalytic properties of silicon solar cell used in microbial fuel cell system
ISSN号:1000-3290
期刊名称:Acta Physica Sinica
时间:2012
页码:-
相关项目:InGaN调制量子阱结构和性质
作者:
Chen Zhao|Ding Hong-Rui|Chen Wei-Hua|Li Yan|Zhang Guo-Yi|Lu An-Huai|Hu Xiao-Dong|
同期刊论文项目
InGaN调制量子阱结构和性质
期刊论文 26
会议论文 1
同项目期刊论文
Enhancement of light-emission efficiency of ultraviolet InGaN/GaN multiple quantum well light emitti
Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting
Influence of indium composition in the prestrained InGaN interlayer on the strain relaxation of InGa
Comment on "Plasmon-Enhanced Ultraviolet Photoluminescence from Hybrid Structures of Graphene/Z
Defect Reduction via Selective Lateral Epitaxy of GaN on an Innovative Masked Structure with Serpent
Precise relationship between voltage and frequency at the appearance of negative capacitance in InGa
Optical properties of ultra-thin InN layer embedded in InGaN matrix for light emitters
Practicable alleviation of efficiency droop effect using surface plasmon coupling in GaN-based light
Stimulated emission related anomalous change of electrical parameters at threshold in GaN-based lase
Electrical, spectral and optical performance of yellow-green and amber micro-pixelated InGaN light-e
Improvement of hole injection and electron overflow by a tapered AlGaN electron blocking layer in In
InGaN/GaN多量子阱蓝光发光二极管老化过程中的光谱特性
Intersubband transitions in Al0.82In0.18N/GaN single quantum well
Investigation of the light emission properties and carrier dynamics in dual-wavelength InGaN/GaN mul
Improvement of doping efficiency in Mg-Al0.14Ga0.86N/GaN superlattices with interlayer by suppressin
Enhanced Hole Transport in Mg-Doped AlxGa1-xN/GaN Superlattices by Strain and Period Modulations
Efficiency droop alleviation in the blue light emitting diodes by the InGaN/GaN triangular shaped qu
Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a hig
Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor depo
The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/Ga
Effects of a prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum w
Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emi
GaN基和GaAs基半导体激光器的电学特性研究
基于背向曝光的GaN基脊型LD制备工艺改进
期刊信息
《物理学报》
北大核心期刊(2011版)
主管单位:中国科学院
主办单位:中国物理学会 中国科学院物理研究所
主编:欧阳钟灿
地址:北京603信箱(中国科学院物理研究所)
邮编:100190
邮箱:apsoffice@iphy.ac.cn
电话:010-82649026
国际标准刊号:ISSN:1000-3290
国内统一刊号:ISSN:11-1958/O4
邮发代号:2-425
获奖情况:
1999年首届国家期刊奖,2000年中科院优秀期刊特等奖,2001年科技期刊最高方阵队双高期刊居中国期刊第12位
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被引量:49876