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Effect of magnesium doping on the light-induced hydrophilicity of ZnO thin films
  • ISSN号:1674-4926
  • 期刊名称:《半导体学报:英文版》
  • 时间:0
  • 分类:O614.411[理学—无机化学;理学—化学] TN304.21[电子电信—物理电子学]
  • 作者机构:Department of Mathematics and Physics,Anhui University of Architecture, Electronics and Information Engineering,Hefei Normal University, Schoolof Mathematics and Physics,Anhui Polytechnic University
  • 相关基金:Project supported by the National Natural Science Foundation of China(Nos.51102072,11104001); the Natural Science Foundation of Anhui Higher Education Institution of China(Nos.KJ2010A284,KJ2010B172,KJ2010B024)
中文摘要:

Undoped and Mg-doped ZnO thin films were deposited on Si(111) and quartz substrates by using the sol-gel method.Microstructure,surface topography and water contact angle of the thin films have been measured by X-ray diffraction(XRD),an atomic force microscope(AFM) and water contact angle apparatus,respectively. The XRD results show that all the thin films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate.With the increase of Mg concentration,the RMS roughness increases from 2.14 to 9.56 nm and the contact angle of the un-irradiated thin films decreases from 89°to 82°. The wetting behavior of the resulting films can be reversibly switched from hydrophobic to hydrophilic,through alternation of UV illumination and dark storage.The light-induced efficiency of the thin films increases with the increase of Mg concentration.

英文摘要:

Undoped and Mg-doped ZnO thin films were deposited on Si(111) and quartz substrates by using the sol-gel method.Microstructure,surface topography and water contact angle of the thin films have been measured by X-ray diffraction(XRD),an atomic force microscope(AFM) and water contact angle apparatus,respectively. The XRD results show that all the thin films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate.With the increase of Mg concentration,the RMS roughness increases from 2.14 to 9.56 nm and the contact angle of the un-irradiated thin films decreases from 89°to 82°. The wetting behavior of the resulting films can be reversibly switched from hydrophobic to hydrophilic,through alternation of UV illumination and dark storage.The light-induced efficiency of the thin films increases with the increase of Mg concentration.

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期刊信息
  • 《半导体学报:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编:李树深
  • 地址:北京912信箱
  • 邮编:100083
  • 邮箱:cjs@semi.ac.cn
  • 电话:010-82304277
  • 国际标准刊号:ISSN:1674-4926
  • 国内统一刊号:ISSN:11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
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  • 被引量:7754