Yb∶KGW激光晶体可用半导体抽运获得瓦级输出,这是由于其本身具备宽的增益带宽(24 nm),大的激光发射截面(2.8×10-20cm2),以及良好的热导性能(3.3 W/m·K)。Yb∶KGW调Q激光器通过透射式新型可饱和吸收材料拓扑绝缘体Bi2Se3实现,获得窄脉宽为1.5μs,中心波长1042 nm,对应脉冲能量为4.7μJ,峰值功率为3.13 W。
Yb∶KGW laser material is well suited to build diode-pumped pulse lasers in watt region because of its broad gain bandwidth of 24 nm, large emission cross section of 2.8×10-20cm2 and good thermal conductivity of 3.3 W/(m · K). A passively Q- switched Yb∶KGW laser is obtained using a transmission- type topological insulator Bi2Se3 as a saturable absorber. The achieved maximum pulse energy is 4.7 m J and the peak power is3.13 W for a pulse duration of 1.5 ms.