中文摘要：

利用水热法生长的N型优质Zn O晶体材料蒸镀了Au、Ag、Al金属,制备出金属-半导体-金属型(MSM)Zn O紫外探测器,测试了五种接触类型的Zn O紫外探测器(Au-Zn O-Au、Ag-Zn O-Ag、Au-Zn O-Al、Ag-Zn O-Al、Al-Zn O-Al)在365 nm紫外光光照前后的I-V特性曲线。实验表明Au-Zn O-Au型、Ag-Zn O-Ag型的探测器的光电流是暗电流的100万倍,因此,Au-Zn O-Au型、Ag-Zn O-Ag型的Zn O紫外探测器性能比AuZn O-Al、Ag-Zn O-Al、Al-Zn O-Al型的优越。Zn O材料的电阻率对Zn O紫外探测器的光电流有较大的影响。在相同偏压下,电阻率越大,探测器的光电流越小。

英文摘要：

ZnO ultraviolet(UV) detectors with Metal-Semiconductor-Metal(MSM) structure were fabricated by the vacuum evaporation of Au, Ag, and Al on the n-type ZnO single crystal, which was grown with hydrother-mal synthesis method. Five types of MSM ZnO detectors(Au-ZnO-Au, Ag-ZnO-Ag, Au-ZnO-Al, Ag-ZnO-Al, Al-ZnO-Al) were illuminated with 365 nm UV light respectively, and their corresponding I-V(Current-Voltage) characteristics were measured. The UV photocurrent values for Au-ZnO-Au and Ag-ZnO-Ag detectors were 1×106 times than their dark current values, and these facts imply that the Au-ZnO-Au and Ag-ZnO-Ag detectors were rather good UV detectors compared to Au-ZnO-Al, Ag-ZnO-Al, Al-ZnO-Al detectors. The photocurrent of the MSM ZnO detectors was also sensitive to the cubic resistance of the ZnO crystal. And it’s found that the higher resistance rate the ZnO crystal the smaller photocurrent value the detector under the same working voltage.