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中文摘要：
为了保证在低温加工及溶液制备的情况下,能够提升高度区域规则的聚（3-己基噻吩）（RR-P3HT）有机场效应晶体管（OFET）的器件性能,本文研究了室温下乙醇及乙腈非溶剂的掺杂,及其对高分子自组织机理与导致的RR-P3HTOFET电学性能的影响.实验发现,适量进行乙醇及乙腈非溶剂的掺杂,将促进RR-P3HT薄膜形成更多期望的微晶粒薄片结构,完善高分子自组织机理,导致RR-P3HTOFET电学性能的提升.实验表明,在RR-P3HT溶液中进行5%乙腈添加后,其器件场效应迁移率的值由原来的4.04×10^-4cm2/V·s增加到3.39×10^-3cm2/V·s,RR-P3HTOFET的场效应迁移率增强了大约8倍.而当乙醇及乙腈非溶剂掺杂浓度过量时,二维微晶粒结构的有序度降低,并且产生了明显的沉淀析出现象,薄膜呈现明显的龟裂现象,这样的沉淀物析出物在导电沟道里将作为缺陷存在,降低了RR-P3HT OFET的器件性能.
英文摘要：
In order to enhance the performance of poly（3-hexylthiophene） （RR-P3HT） organic field-effect transistors （OFET） by low temperature solution-process of non-solvent addition （ acetonitrile and ethanol）,the resulting self-organization of polymer semiconductor layer and performance of RR-P3HT OFET are studied in this paper. The results fshow that an appropriate non-solvent addition （ acetonitrile and ethanol） promotes the formation of more microcrystalline lamellae and improves the self-organization of polymer semiconductor layer,resulting in electrical properties enhancement of polymer OFET. The results indicate that the field-effect of RR-P3HT OFET with 5% acetonitrile addition can reach 3. 39 × 10-3 cm2 /V·s,which is higher by a factor of 8 than that with 0% acetonitrile addition. Encessive non-solvent addition （acetonitrile and ethanol） leads to more precipitates which reduce microcrystalline lamellae and lowers the quality of polymer film,resulting in performance degradation of polymer OFET.
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