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Improving the Quality of GaN on Si(111) Substrate with a Medium-Temperature/High-Temperature Bilayer
  • ISSN号：0021-4922
  • 期刊名称：Japanese Journal of Applied Physics
  • 时间：2013.8
  • 页码：1-4
  • 相关项目：常关型宽禁带氮化镓MOS场效应晶体管的研究
作者： Han Xiaobiao|Wu Zhisheng|Yang Liu|Zhang Baijun|
同期刊论文项目
常关型宽禁带氮化镓MOS场效应晶体管的研究
期刊论文 31 专利 7
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