中文摘要：

随着器件尺寸的进一步减小，由量子效应导致的能带分裂对MOSFET中闽值电压特性的影响变得越来越重要。提出了一个包含量子效应（QME）的短沟道金属氧化物场效应晶体管（MOSFET）分析的阈值电压模型，该模型建立在求解包含量子校正的泊松方程的基础上。分析在泊松方程中考虑量子效应后建立的分析的阈值电压模型可知：随着器件尺寸的减小，由量子效应和短沟道效应引起的闽值电压的升高变得越来越严重。本模型的优点是没有引入额外的物理参数。

英文摘要：

The split of the band caused by the quantum mechanism （QM） effects plays a more and more significant effect on the threshold voltage properties in MOSFET as the CMOS technology scales down. An analytical 2D model taking into account the QM effects for the threshold voltages characteristics of shortchannel MOS transistors was proposed on the basis of the solution of the developed quantum correction Poisson equation. This model clearly illustrates the increased threshold voltage caused by QM effects, and the shortchannel effects become more obvious after QM effects were considered. The attractive feature in this model is that no addition parameter is used to take into account the quantum effects.