中文摘要：

采用脉冲激光沉积法（PLD）在（001）SrTiO3基片上制备了基于 Pb（Zr0.52Ti0.48）O3/SrRuO3（PZT/SRO）的铁电隧穿结.利用多种表征手段测试并分析薄膜微观结构及电性能.结果表明：PZT 和 SRO 薄膜具有良好的取向结晶性,实现了薄膜的外延生长.8 nm PZT薄膜具有稳定的铁电性能,在外电场为7 500×103 V·cm–1时,其剩余极化（2Pr）为3.79×10–6 C·cm–2,矫顽场（2Ec）为4 300×103 V·cm–1.室温条件下,隧穿结经±7 500×103 V·cm–1电场极化后具有明显的隧穿电阻（TER）效应,室温下TER最高可达约126.

英文摘要：

The Pb（Zr0.52Ti0.48）O3/SrRuO3（PZT/SRO） ferroelectric tunneling junction on （001） SrTiO3 substrate was fabricated by pulsed laser deposition（PLD）. The microstructure and electric properties of the films were characterized with X-ray diffraction, atomic force microscope, RT66A ferroelectric tester and HP4155C semiconductor parameter analyzer. The results show that the PZT and SRO thin films have good orientation of crystallization and achieve the epitaxial growth. 8 nanometer PZT film has stable ferroelectricity and demonstrates that the remnant polarization is 3.79×10–6 C·cm–2, the coercive field is 4 300×103 V·cm–1at 7 500×103 V·cm–1. After ±7 500×103 V·cm–1 poling, the PZT/SRO ferroelectric tunneling junction has the tunneling electroresistance（TER） effect with the biggest value of 126 at room temperature.