中文摘要：

为制备高纵横比的纳米硅尖，研究了掩模的偏转方向对硅尖形状的影响。设计了硅尖制备的工艺流程，采用KOH溶液湿法各向异性腐蚀（100）单晶硅的方法制备硅尖，根据实验结果和{411}晶面模型，分析了硅尖侧壁的组成晶面，讨论了掩模偏转方向对硅尖形状的影响，得到了制备高纵横比纳米硅尖的工艺参数。实验结果表明：当腐蚀溶液浓度和温度一定时，正方形掩模的方向并不影响快腐蚀晶面的类型，利用正方形掩模的偏转，可以制备出八面体和四面体的硅尖。当正方形掩模边缘沿（110）晶向时，在78℃、浓度为40％的KOH溶液中腐蚀硅尖，经980℃于氧氧化3h进行削尖，可制备出纵横比〉2的八面体纳米硅尖阵列，硅尖侧壁由与（100）面夹角为76．37°的{411}晶面组成。

英文摘要：

With the aim to fabricate nano-silicon-tips with a high aspect ratio, the effect of changing the mask direction on tip shapes was studied. The fabrication processes for nano-silicon-tips using a （100） single crystal silicon wafer by the anisotropic wet etching in the KOH etchant were designed. Based on the experiment and the model of {411} crystal planes,the crystal planes of silicon tips were analyzed. Through discussing the effect of the mask direction on tip shapes, the process parameters to get high aspect ratio nano-silicon-tips were achieved. Experimental results indicate that silicon tips of octahedron and tetrahedron are fabricated with changing mask directions. The direction of mask does not affect the rapid etched crystal planes at the fixed solution concentration and temperature. Nanosilicon-tips are formed by the anisotropic etching in 40% KOH etchant at 78℃ and the dry oxidation sharpening in 3 h at 980 ℃ as the square masks are aligning to the （110） direction. Experiments show that the high aspect ratio of the tip is greater than 2, and the profiles of silicon tips are constituted by {411} crystal planes that intersect （100） crystal planes at 76.37°.