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中文摘要：
以氮化硅（Si3N4）为基体，氮化硼（BN）为添加剂，叔丁醇为溶剂，采用凝胶注模成型与无压烧结工艺（温度为1750℃、保温时间为1．5h、流动N。气氛），成功制备出具有一定强度和低介电常数的多孔BN／Si3N4陶瓷。在浆料中初始固相含量固定为15％体积分数的基础上，研究了BN含量对多孔Si3N4陶瓷材料的气孔率、物相组成及显微结构的影响，分析了抗弯强度、介电常数与结构之间的关系。结果表明，通过改变BN含量可制备出气孔率为55．1Voo～66．2％的多孔si3N4陶瓷；多孔BN／Si3N4复合陶瓷的介电常数随着BN含量的增加而减小，为3．39～2．25；抗弯强度随BN含量提高而有所下降，BN质量分数为2．5％时，抗弯强度最高，为（74．8±4．25）MPa。
英文摘要：
Porous BN/Sis N4 ceramics with high strength and low dielectric constant were prepared by tert-butyl alcohol （TBA） based gel-casting method and pressureless sintering process at 1750 C for 1.5 h in flowing nitrogen. At a fixed solid loading （15%, volume fraction） of the initial slurry, the influence of boron nitride content on the porosity, phase and microstructure was discussed. The relationships among flexural strength, dielectric constant and microstructure were also discussed. The results show that porous BN/Sis N4 composite ceramics with high porosity ranging from 55.1% to 66.2o/00 are prepared by adjusting the content of BN. Dielectric constant of porous BN/Si2 N4 composite ceramics is between 3.39 and 2.25, which shows a decreased trend with the content of BN increasing. Flexural strength decreases with BN content increasing, flexural strength reaches the maximum value （74.8±4.25） MPa, when the mass fraction of BN is 2.5%.
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