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中文摘要：
利用射频磁控溅射制备了TiO_2薄膜,通过X射线衍射仪、扫描电镜、四探针等手段对薄膜进行了表征,研究了氩气气氛下退火温度对TiO_2薄膜的形貌、结构和电学性能的影响。研究结果表明,氩气气氛下600℃退火的TiO_2薄膜颗粒大小均匀,表面结构致密。400～600℃退火时薄膜为单一的锐钛矿相,700℃退火时薄膜为非晶相,800℃退火时薄膜完全转变为金红石相。退火温度为500℃时,该TiO_2薄膜的电阻率最低,电学性能最佳。
英文摘要：
TiO_2 thin film was prepared by using RF magnetron sputtering and characterized with X-ray diffraction,scanning electron microscopy and four-probe method.The effects were studied of annealing temperature on the morphology,microstructure and electrical performance of TiO_2 thin film at an argon atmosphere.The results show that the film has uniform particle size and compact surface structure under the conditions of argon atmosphere and 600 ℃ annealing temperature.The film has a single anatase phase at400～600 ℃ annealing temperature and an amorphous phase at 700 ℃ annealing temperature,and it is completely transformed into rutile phase at 800℃annealing temperature.TiO_2 thin film annealed at 500℃has the lowest resistivity and the best electrical performance.
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