对于半导体瞬态问题的数学模型,我们采用Lagrange型分片二次多项式空间和分片常数函数空间分别作为试探函数和检验函数空间,构造了该问题的全离散二次有限体积元格式,并进行误差分析,得到了次优阶L^2模误差估计结果。
The transient behavior of a semiconductor device was studied in this paper by using piecewise Lagrange quadratic trial function and piecewise constant test ruction, we derived a fully discrete finite volume element method for this problem and obtained a suboptimal L^2 error estimates.