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AlGaN-based 330 nm resonant-cavity-enhanced p-i-n junction ultraviolet photodetectors using AlN/AlGa
  • 期刊名称：Phys. Status Solidi C
  • 时间：2010.10.10
  • 页码：1821-1824
  • 相关项目：宽禁带半导体极化诱导能带调控原理及器件应用
作者： 谢自力|刘斌|聂超|江若琏 等|
同期刊论文项目
宽禁带半导体极化诱导能带调控原理及器件应用
期刊论文 95 会议论文 29 专利 6
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