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Optical and Structural Properties of Cr-Doped GaN Grown by HVPE Method
  • ISSN号：0256-307X1741-3540
  • 期刊名称：CHINESE PHYSICS LETTERS
  • 时间：2010.12.12
  • 页码：127801-127805
  • 相关项目：宽禁带半导体极化诱导能带调控原理及器件应用
作者： Xiu Xiang-Qian|Xiu Xiang-Qian|Hua Xuemei|Zhang Rong et.al.|
同期刊论文项目
宽禁带半导体极化诱导能带调控原理及器件应用
期刊论文 95 会议论文 29 专利 6
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