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厚膜工艺制备后栅极场发射显示板的研究
  • 期刊名称:真空科学与技术学报
  • 时间:0
  • 页码:409-413
  • 语言:中文
  • 分类:TN873.95[电子电信—信息与通信工程]
  • 作者机构:[1]江苏省信息显示工程技术研究中心东南大学电子科学与工程学院,南京210096
  • 相关基金:国家自然科学基金(No.60801002); 高等学校学科创新引智计划(111计划)资助项目(B07027)
  • 相关项目:辅助聚焦常开型后栅极碳纳米管场发射显示器件的理论研究与设计
中文摘要:

讨论了包括丝网印刷、厚膜光刻、荧光粉沉积成膜、喷涂等厚膜工艺以及后栅极结构场致发射显示屏的制备工艺。研究了老炼工艺对阴极发射特性的改善。采用全厚膜工艺制备了2英寸后栅极场发射显示板样屏,在阳极距为1mm的后栅极结构中,阳极工作电压为2kV时,通过对样屏的测试分析,阴极开关范围差小于100V,达到了行列低压寻址驱动的要求,验证了全厚膜制备后栅极场发射显示板的可行性。

英文摘要:

The paper addressed the application of the well-developed thick film technologies,such as screen printing,lithography,phosphor deposition,and spraying,to the fabrication of under-gate field emission display panel.The influence of aging process on improving the field emission characteristics of cathode was studied.A 2 inch under-gate field emission display panel with an anode distance of 1 mm was fabricated by the thick film technology to experimentally evaluate its characteristics and its performance.The cathode driving voltage was reduced to lower than 100V at an anode voltage of 2 kV,which enables the low voltage address driving.We suggest that the thick film technology should be feasible to fabricate the field emission panel.

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