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钛酸铋基铁电薄膜研究进展
  • 期刊名称：功能材料, vol 37: 351-354, 2006，
  • 时间：0
  • 分类：TM223[电气工程—电工理论与新技术;一般工业技术—材料科学与工程]
  • 作者机构：[1]华中科技大学物理系,湖北武汉430074, [2]华中科技大学电子科学和技术系,湖北武汉430074
  • 相关基金：国家自然科学基金资助项目（50272022.90407023）;武汉市青年科技晨光计划资助项目（20045006071-41）
  • 相关项目：用于SOC的新一代嵌入式铁电存储器材料、器件与兼容工艺
关键词： 钛酸铋, 铁电薄膜, 制备工艺, 掺杂改性, 疲劳, Bi3Ti4O12（BIT） , ferroelectric thin film, preparation, doping, fatigue
中文摘要：

钛酸铋基铁电薄膜具有优良的铁电、介电性能，在非挥发性存储器件方面有很好的应用前景。本文分别从制备工艺、掺杂改性、疲劳特性的研究等方面综述了最新的研究进展，并对当前研究中存在的问题进行了讨论。

英文摘要：

BIT-based ferroelectric thin films have excellent ferroeLectric/dielectric properties and promising application prospect in non-volatile random access memory. In this article, the effects of doping and preparation on the properties of the thin films and the fatigue property researches are summarized. Furthermore, we discuss several problems of the current researches hased on the acquired research results.

同期刊论文项目
聚合物基纳米复合钽铌酸钾薄膜制备及性能研究
期刊论文 9
用于SOC的新一代嵌入式铁电存储器材料、器件与兼容工艺
期刊论文 69 会议论文 16
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