中文摘要：

利用多响应正交试验方法研究了PECVD法沉积氮化硅薄膜的工艺参数的优化问题。鉴于目前针对多输出影响过程,尚无有效的方法进行工艺参数优化这一问题,利用综合评分法对衬底温度、气体总流量、NH3/SiH4流量比、反应腔气体压力、高频电场功率5个对氮化硅薄膜的主要质量特性影响较大的工艺参数进行全局优化,再对不满足质量期望的工艺参数进行部分正交分析,对全局优化的结果进行调整,得到最终的氮化硅镀膜的最优工艺参数。国内某光伏企业的验证试验表明了所提方法的有效性。

英文摘要：

The parameters optimization approach for SiNx∶ H film deposition by PECVD method were studied through a multi-response orthogonal experimental design. Aiming to solve the problem that there is not an effective method to evaluate the parameters in a multi-response environment,a comprehensive scoring method was designed to obtain a global optimization of total gas flow,substrate temperature,gas flow ratio NH3/SiH4, working pressure in deposition chamber and power of high frequency electromagnetic fields which could prominently influence the quality characteristics of SiNx∶ H film,then a partial orthogonal analysis is conducted to evaluate the parameter which cannot achieve the quality characteristics to get the final optimum parameters. The effectiveness of the proposed approach is elaborated by the verification experiments in a native PV enterprise.