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Role of vacancies to p-type semiconducting properties of SiGe nanowires
  • ISSN号：2050-7526
  • 期刊名称：Journal of Materials Chemistry C
  • 时间：2014.8.28
  • 页码：6536-6546
  • 相关项目：硅锗异质结纳米线中杂质和缺陷的第一性原理研究
作者： Zhou, Rulong|Qu, Bingyan|Zhang, Bo|Lib, Pengfei|Zeng, Xiao Cheng|
同期刊论文项目
硅锗异质结纳米线中杂质和缺陷的第一性原理研究
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