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MOCVD外延生长a面GaN薄膜及其面内各向异性研究
  • ISSN号：1003-353X
  • 期刊名称：《半导体技术》
  • 时间：0
  • 分类：TN304.055[电子电信—物理电子学]
  • 作者机构：[1]南京大学物理系江苏省光电功能材料重点实验室
  • 相关基金：国家“973”重点基础研究项目(2006CB6049);国家“863”高技术研究发展计划(2006AA03A103,2006AA03A118,2006AA03Z411);国家自然科学基金(60721063,60676057,60731160628);江苏省创新学者攀登项目(BK2008019)
作者： 李弋[1], 谢自力[1], 刘斌[1], 傅德颐[1], 张荣[1], 郑有炓[1]
关键词： a面氮化镓, 非极性, 金属有机物化学气相沉积
中文摘要：

使用MOCVD直接外延r面蓝宝石衬底得到非极性a面GaN薄膜。高分辨X射线衍射发现薄膜晶体结构的面内各向异性,利用倒易空间法获得[0001]和[100]方向横向关联长度分别为41.9、14.8nm,解释了面内各向异性的一个原因,在这两个方向N原子的悬挂键数目的差异导致了Ga原子这两个方向上的扩散长度不同,是面内各向异性的另一个重要原因。AFM结果显示a面GaN薄膜表面较平整,表面粗糙度均方根仅为3.9nm,表面沿[0001]方向起伏的条纹再次验证了a面GaN的面内各向异性。

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期刊信息
  • 《半导体技术》
  • 中国科技核心期刊
  • 主管单位:中国电子科技集团公司
  • 主办单位:中国电子科技集团公司第十三研究所
  • 主编：赵小玲
  • 地址：石家庄179信箱46分箱
  • 邮编：050051
  • 邮箱：informax@heinfo.net
  • 电话：0311-87091339
  • 国际标准刊号：ISSN：1003-353X
  • 国内统一刊号：ISSN：13-1109/TN
  • 邮发代号:18-65
  • 获奖情况:
  • 中文核心期刊,中国科技论文统计用刊
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  • 被引量:6070