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两步法生长氮化铝中缓冲层和外延层工艺研究
  • 期刊名称：中国科学(E辑:技术科学)
  • 时间：0
  • 页码：1080-1084
  • 语言：中文
  • 相关项目：获得高质量低位错密度GaN衬底的生长新思路及相关关键问题研究
作者： 修向前|刘斌|姚靖|张荣|韩平|郑有炓|谢自力|聂超|龚海梅|徐峰|刘启佳|
同期刊论文项目
获得高质量低位错密度GaN衬底的生长新思路及相关关键问题研究
期刊论文 35 会议论文 8 专利 8
同项目期刊论文
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高温高压合成Co掺杂ZnO基DMS及其磁性特征
Carrier transport and luminescence properties of n-type GaN
Al incorporation, structural and optical properties of AlxGa1-xN (0.13 <= x <= 0.8) alloys grown by
Impact of lattice strain on the phase formation, polarization and dielectric constant of PbZr1-xTixO
Anisotropic crystallographic properties, strain, and their effects on band structure of m-plane GaN
Circular photogalvanic effect at inter-band excitation in InN
Al_xGa_(1-x)N/AlN超晶格材料特性研究
n型GaN薄膜输运性质与发光研究
Schottky rectifiers fabricated on bulk GaN substrate analyzed by electron-beam induced current techn
Study of buffer and epitaxy technology in two-step growth of aluminium nitride
Synthesis of [100] wurtzite InN nanowires and [011] zinc-blende InN nanorods
The growth temperatures dependence of optical and electrical properties of InN films
Impact of lattice strain on the phase formation, polarization, and dielectric constant of PbZr1-xTix
Microstructure and dislocation of epitaxial InN films revealed by high resolution x-ray diffraction
Structural and magnetic properties in Mn-doped GaN grown by metal organic chemical vapor deposition
高分辨率X射线衍射研究InGaN/GaN多量子阱结构In组分及厚度
生长温度对AlGaInN四元合金薄膜性质的影响
m面GaN平面内结构和光学各向异性研究
Chemical mechanical polishing of freestanding GaN substrates
氢化物气相外延生长的GaN厚膜中位错密度计算
MOCVD生长的全组分InGaN材料