中文摘要：

Novel indium nitride(In N)leaf-like nanosheets and nanowires have been grown on Si substrate by chemical vapor deposition method.The characterization results indicate that the samples are single-crystalline,and the growth direction of the nanowires and nanoleaves is[0001].The growth mechanism of the In N nanoleaves is following the pattern of vapor–liquid–solid process with a three-step growth process.In addition,the room temperature photoluminescence spectra of two nanostructures show band-to-band emissions around 0.706 e V,where the emission from single nanoleaf is stronger than nanowire,showing potential for applications in optoelectronic devices.

英文摘要：

Novel indium nitride （INN） leaf-like nanosheets and nanowires have been grown on Si substrate by chemical vapor deposition method. The characterization results indicate that the samples are single-crystalline, and the growth direction of the nanowires and nanoleaves is [0001]. The growth mechanism of the InN nanoleaves is following the pattern of vapor-liquid-solid process with a three-step growth process. In addition, the room temperature photoluminescence spectra of two nanostructures show band-to-band emissions around 0.706 eV, where the emission from single nanoleaf is stronger than nanowire, showing potential for applications in optoelectronic devices.