中文摘要：

为克服InGaAs/InP雪崩二极管（APD）光电探测器的后脉冲现象,本文提出了基于FPGA的单光子探测器（SPD）测量系统,其门控频率最高可达100MHz,门控宽度最窄可到1ns,死区时间设定为109ns,并且这些参数都易于调节且有助于减少后脉冲概率。实验结果表明：在以上门控条件并且制冷温度为218K时,探测器的有效门宽为0.79ns；在死区时间超过109ns时,后脉冲现象可忽略；最大光子探测效率（PDE）约为14%；在光子探测效率为10%时,暗计数率（DCR）约为2×10^－5/ns；并具有小型化、易调节的特点。

英文摘要：

In this paper,we demonstrate an FPGA b a sed gated mode single photon detector for the InGaAs/InP infrared avalanche phot on diode.Thank s to the FPGA′s flexibility,the detector′s gate repeating frequency can reach up to 100MHz,gate width down to 1ns,and holdoff time is set at 109ns,all of which contribute to low afterpulsing probability.Moreover,all these parameters are flexible to adjust via a computer interface.The performance of this single photon detector is characterized by the platform,working at temperature of 218K .And it yields only 2×10^-5/ns dark count rate （DCR） when photon detection efficiency is 10%,and the maximum photon detection efficiency o f 14% is obtained.It is measured that its effective gate width is 0.79ns,and when the holdoff time between gates exceeds 109ns,the afte rpulsing probability can drop to a negligible level. Performance at different temperatures is also investigated.This near-infrared s ingle photon detector can realize high photon detection efficiency,low dark count rate and low afterpulsing probability while working a t 100MHz of gate repeating frequency,which is size-efficient,cost-effective a nd easy to adjust.