中文摘要：

为了研究N′,N′-乙基硫脲添加剂在微沉积工艺中对铜金属孔洞填充能力的影响，采用线性伏安法（LSV）、循环伏安法（CV）、SEM测量法分析比较了无添加剂、含硫脲和含N′,N′-二乙基硫脲添加剂时微沉积铜工艺中的电化学行为，并借助塔菲尔方程，分析比较此三种情况下电镀反应过程中的电极动力学参数．结果显示：当铜微沉积工艺中加入N′,N′-二乙基硫脲添加剂时，产生活性极化，该活性极化效应降低铜离子的放电速度，抑制孔洞边缘部分沉积较快区域的过快生长；同时活性极化提高，将导致成核点的增加，沉积膜的晶粒较小，镀膜也较平滑细致，实验测得铜离子的平滑能力比没有添加剂时提高约50％．最后通过微沉积工艺成功地将金属铜填充入宽为10μm，深宽比为4：1的微型凹槽中，且镀层内没有空洞、空隙以及细缝等缺陷．

英文摘要：

In order to investigate the copper gap-filling during micro electroplating process with additive （N′,N′-diethylthiourea）, the electrochemical behavior of different electrolyte （without additive, with thiourea or N′,N′-diethylthiourea additive） were studied by LSV, CV and SEM, and the electrode kinetics parameters was studied by the Tafei equation. The results show that when N′,N′-diethylthiourea was used during the micro electroplating copper process, activation polarization was generated; metal ion discharge rate was low- ered, the overgrowth of fast plating area such as micro-trench edges was restrained; at the same time, activa- tion polarization was increased, thus the crystal nucleus molding speed on the electrode was accelerated; the crystal growth speed was decreased, the plating became flat, and the leveling ability was increased about 50% than that without additive. Furthermore, some micro trenches in the silicon wafer, and the width of 10 μn and aspect ratio of 4 ： 1, were filled by the micro electroplating process with the additive N′,N′-diethylthiourea, however, the electroplating layer had no voids or seams.