中文摘要：

真空绝缘性能决定着真空灭弧室的设计及成本，在真空断路器向高电压等级发展的背景下真空绝缘性能研究显得尤为重要。触头材料是影响真空绝缘性能的重要因素之一，因此新型触头材料真空绝缘性能的研究成为真空绝缘研究领域的热点。基于以上分析，研究了一种新型触头材料一全武合金的真空绝缘性能，并将它与真空灭弧室常用触头材料CuCr25和CuCr50的绝缘性能进行了对比。首先对3种触头材料的真空灭弧室试品用升降法进行了雷电冲击试验，结果表明3种触头材料击穿电压的概率分布均符合Weibull分布，在触头开距为2～10mm范围内其50％击穿电压的关系为CuCr50〉全武合金〉CuCr25；然后对3种触头材料用升压法进行了工频击穿试验，结果表明当开距为1m，升压速度为3kV／s时，3种触头材料绝缘强度的关系为CuCr50≈全武合金≈CuCr25；最后对比了工频升压速度对全武合金绝缘特性的影响，结果表明当升压速度从3kV／s降为1．5kV／s时，击穿电压升高了1．6倍。

英文摘要：

Contact material is one of the key influential factors on vacuum dielectric performance. The dielectric performance in vacuum of a new kind of contact material - Quanwu alloy is studied and compared with CuCr25 and CuCr50 contact material that are widely used in vacuum interrupters. First, basic impulse level （BIL） tests （1.2/50 μs） were done by up-and-down method for the 3 contact materials. The BIL tests revealed that the breakdown probability distribution of the 3 contact materials followed Weibull distribution under different gaps. The 50% breakdown voltage of the 3 contact materials were in the order of CuCr50〉 Quanwu alloy 〉 CuCr25 in the contact gap range from 2 mm to 10 ram. The power frequency dielectric test results show that the dielectric strength of the 3 contact materials is with CuCr50≈Quanwu alloy≈CuCr25 at contact gap lmm when the rising rate of the power frequency voltage is 3 kV/s. Finally the influence of rising rate of power frequency on the dielectric performance of Quanwu alloy was studied. The results show that the breakdown voltage of Quanwu alloy increases 1.6 times when the rising rate decreases from 3 kV/s to 1.5 kV/s. The experimental results show that the dielectric performance of Quanwu alloy is between CuCr25 and CuCr50 contact materials.