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中文摘要：
采用射频磁控溅射法在石英基片上制备了厚度约为200nm的ZrW2O8薄膜。在不同温度下对薄膜进行热处理,通过X射线衍射和扫描电镜研究了热处理温度与热处理过程中通氧量大小对ZrW2O8薄膜组分与形态的影响。结果表明：在空气中热处理时,随着热处理温度的升高,薄膜由非晶态转变为晶态;经750℃处理的薄膜组成中ZrW2O8含量增大;热处理温度再升高,ZrW2O8逐步分解直至消失。在热处理过程中通入氧气,能使薄膜ZrW2O8含量增加,晶化效果更好,薄膜的形态更平整;在740℃热处理过程中通氧量达到20.8L/s后,再增加通氧量对薄膜的晶化影响不大。
英文摘要：
ZrW2O8 films with a thickness of -200nm were deposited on silica substrate by radio frequency magnetron sputtering. The ZrW2O8 films were heat treated at different temperatures. The effects of the temperature and flow rate of oxygen in the heat treatment process on the components and surface morphology of ZrW2O8 film were studied. The results indicate that with the increase of the heat treatment temperature in ambient air, the structure of the film is transformed from amorphous to a crystalline state and the content of ZrW2O8 in the film increases to a maximum at about 750 ℃. When the temperature is raised further, the ZrW2O8 content in the film decreases until it finally disappears. When the heat treatment process is carried out with oxygen, the content of ZrW2O8 in the film increases and the thin films heat treated at relatively low temperature have good crystallinity and smooth surfaces. The crystallinity of the thin film only has a slight change when the flow rate of oxygen is over 20.8 L/s at 740 ℃.
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