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Surface damage versus defect microstructures in He and H ion co-implanted Si3N4/Si
  • ISSN号：0168-583X
  • 期刊名称：Nuclear Instruments and Methods In Physics Researc
  • 时间：0
  • 页码：148-153
  • 相关项目：He和H离子注入Si基材料引起的表面剥离及机理研究
作者： Zhu, F.|Liu, C. L.|Gao, Y. J.|Wang, Z.|Wang, J.|
同期刊论文项目
He和H离子注入Si基材料引起的表面剥离及机理研究
期刊论文 12 会议论文 7
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