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中文摘要：
目的研究硅微波低噪声三极管2SC3312对方波电磁脉冲的敏感部位和灵敏参数．方法利用方波电磁脉冲发生器对三极管进行方波电磁脉冲注入，观察三极管电参数的变化．结果沿CB注入方波脉冲时最小损伤电压为30V-50V，最小损伤能量为2．80J-3．10J；沿EB注入方波脉冲时最小损伤电压为85V-125V，最小损伤能量为22．60J-23．50J．三极管损伤前最先发生变化的电参数是CE反向击穿电压．结论三极管2SC3312对方波电磁脉冲最敏感的部位是集电结（CB），最灵敏参数是CE反向击穿电压VBRCEO．
英文摘要：
Objective To study the sensitive part and the sensibility parameter on square wave electromagnetic pulse for silicon micro wave low-noise triod 2SC3312. Methods By injecting the square wave electromagnetic pulse into triod with High Frequency Noise Simulator we can observe the change of electricity parameter. Results It is discovered that the injection of the square wave electromagnetic pulse along CB results in the loss of voltage （30V-50V） and energy （2.80J-3.10J） ; the injection along EB results in the loss of voltage （85V-125V） and energy （22.60J-23.50J）. The earliest change of electricity parameter taking place before the damage of triod is the reverse breakdown voltage VBRCEO between collector and emitter. Conclusion The experiment shows that the triode＇s most sensitive position of square wave electromagnetic pulse is the collector junction. The most sensitive parameter is the reverse breakdown voltage VBRCEO between collector and emitter.
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