位置：成果数据库 > 期刊 > 期刊详情页
Microstructure and dislocation of epitaxial InN films revealed by high resolution x-ray diffraction
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：0
  • 页码：023504-023504
  • 语言：英文
  • 相关项目：获得高质量低位错密度GaN衬底的生长新思路及相关关键问题研究
作者： Lu, H.|Schaff, W. J.|Xie, Z. L.|Shi, Y.|Li, Y.|Liu, Q. J.|Chen, P.|Han, P.|Gu, S. L.|Liu, B.|Zheng, Y. D.|Zhang, R.|Zhang, Z.|Xiu, X. Q.|
同期刊论文项目
获得高质量低位错密度GaN衬底的生长新思路及相关关键问题研究
期刊论文 35 会议论文 8 专利 8
同项目期刊论文
Structural and optical properties of nonpolar m-plane GaN and GaN-based LEDs on gamma-LiAlO2
Optical and magnetic properties of Fe-Doped GaN diluted magnetic semiconductors prepared by MOCVD me
Demonstration of GaN/InGaN light emitting diodes on (100) beta-Ga2O3 substrates by metalorganic chem
高温高压合成Co掺杂ZnO基DMS及其磁性特征
Carrier transport and luminescence properties of n-type GaN
Al incorporation, structural and optical properties of AlxGa1-xN (0.13 <= x <= 0.8) alloys grown by
Impact of lattice strain on the phase formation, polarization and dielectric constant of PbZr1-xTixO
Anisotropic crystallographic properties, strain, and their effects on band structure of m-plane GaN
Circular photogalvanic effect at inter-band excitation in InN
Al_xGa_(1-x)N/AlN超晶格材料特性研究
两步法生长氮化铝中缓冲层和外延层工艺研究
n型GaN薄膜输运性质与发光研究
Schottky rectifiers fabricated on bulk GaN substrate analyzed by electron-beam induced current techn
Study of buffer and epitaxy technology in two-step growth of aluminium nitride
Synthesis of [100] wurtzite InN nanowires and [011] zinc-blende InN nanorods
The growth temperatures dependence of optical and electrical properties of InN films
Impact of lattice strain on the phase formation, polarization, and dielectric constant of PbZr1-xTix
Structural and magnetic properties in Mn-doped GaN grown by metal organic chemical vapor deposition
高分辨率X射线衍射研究InGaN/GaN多量子阱结构In组分及厚度
生长温度对AlGaInN四元合金薄膜性质的影响
m面GaN平面内结构和光学各向异性研究
Chemical mechanical polishing of freestanding GaN substrates
氢化物气相外延生长的GaN厚膜中位错密度计算
MOCVD生长的全组分InGaN材料