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Investigation of the threshold voltage drift in enhancement mode GaN MOSFET under negative gate bias
  • ISSN号：0021-4922
  • 期刊名称：Japanese Journal of Applied Physics
  • 时间：2015.4.1
  • 页码：1-4
  • 相关项目：硅基GaN功率开关器件阻断特性的研究
作者： Wang, Jinyan|Hao, Yilong|Wu, Wengang|Shen, Bo|
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硅基GaN功率开关器件阻断特性的研究
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