中文摘要：

以Ba（Ti1-xNbx）O3和（Ba1-xLax）Ti1-x/4O3（x=0.03）陶瓷为对象,对应研究Nd5＋和La3＋分别替代在BaTiO3陶瓷的Ti4＋位和Ba2＋位所起的施主效应和缺陷补偿机制.结果表明：La3＋诱致Ti空位缺陷,形成阳离子空位补偿,而非具有施主效应的电子补偿模式.Nb5＋在BaTiO3的掺杂导致多重补偿机制,除产生共存的Ba空位和Ti空位缺陷外,来源于Nb5＋施主效应的电子补偿占支配地位,导致Ba（Ti1-xNbx）O3陶瓷的半导体效应.

英文摘要：

Ba（ Ti1- xNbx） O3and（ Ba1- xLax） Ti1- x /4O3（ x = 0. 03） ceramics were chosen as two research objects,and the donor effect and vacancy compensation mechanism caused by the substitutions of Nd5 ＋for the Ti4 ＋site in BaTiO3 and of La3 ＋for the Ba2 ＋site in BaTiO3 were studied correspondingly. The results indicated that La3 ＋induced Ti vacancies,mainly forming cation vacancy compensation mechanism,rather than the electron compensation mode caused by the La3 ＋donor effect. Nb5 ＋doping in BaTiO3 resulted in the multiple compensation mechanisms. Apart from the coexistence of Ba vacancies and Ti vacancies caused by Nb5 ＋doping,the electron compensation mode from the Nd5 ＋donor effect was predominant,which led to a semiconducting behavior of Ba（ Ti1- xNbx） O3（ x = 0. 03） ceramic.