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中文摘要：
利用离子注入以100和180keV的能量和5×10^15cm^-2的剂量向单晶硅片双面注入氮杂质,然后进行不同温度的快速热处理（RTP）.利用傅里叶红外（FTIR）光谱研究不同温度RTP处理后的注氮硅中氮杂质的行为.研究发现,经过750～900℃的RTP处理50s后,样品的FTIR图谱中出现四个新的红外吸收峰,并随温度升高先增强后减弱,这些红外吸收峰被认为与氮-空位复合体有关.通过构建原子结构模型并进行理论模拟计算分析,表明在新出现的红外吸收峰中有两个与双氮-双空位（N2V2）结构相关的红外吸收峰.
英文摘要：
Nitrogen ions are implanted into silicon wafer on both sides, followed by rapid thermal processing （RTP） at different temperatures. Fourier transform infrared spectroscopy （FTIR） is employed to characterize the nitrogen behavior in the as-nitrogen-implanted silicon and RTP-treated nitrogen-implanted silicon samples. It is found that four new IR absorption bands appear in the FTIR spectra of the nitrogen-implanted silicon subjected to RTP at 750～900℃ ,which are believed to be related to nitrogen-vacancy complexes. Theoretical calculation based on a specific atomic configuration model shows that among the newly observed four IR absorption bands there are two bands that are related to the N2V2 complex.
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