中文摘要：

采用射频磁控溅射法分别在不同溅射功率下制备了Hf O2薄膜,基于该组薄膜实现了金属-绝缘体-金属（MIM）电容器原型器件。采用Raman、原子力显微镜（AFM）、扫描电子显微镜（SEM）、X射线光电子能谱学（XPS）和电学测试仪等分析手段,研究了溅射功率对薄膜微结构和电学特性的影响。测试结果表明,随着溅射功率的增加,HfO2薄膜由无定形态向单斜晶相转化、颗粒尺寸逐渐增大、Hf—O键结合度增强,由于提高溅射功率导致了薄膜晶化、团簇和Hf—O结合能减小,使MIM电容器击穿电压降低,漏电流呈现先降后增。结果表明溅射功率为150 W时,HfO2薄膜获得较好的电学性能。

英文摘要：

HfO2 thin films were prepared by RF magnetron sputtering under various powers, and then metal-insulator-metal （MIM） capacitors with different films were obtained. The impact of sputtering power on the structural and electrical properties of the thin films were investigated using Raman, atomic force microscope （ AFM ）, scan electronic microscope （ SEM ）, X-ray photoelectron spectroscopy （XPS） and the electrical measuring instruments, respectively. The test results show that as the sputtering power increases, the HfO2 films are transformed from amorphous state to monoclinic crystal phase with larger grain size and stronger Hf--O. As the sputtering power increased, the crystallization of film, cluster and lower Hf-O binding energy decreased, resulting that the breakdown voltage of MIM capacitors decreased and the leakage current descended firstly, then ascended. The results indicate that the relatively better electrical properties of the HfO2 thin films can be achieved at 150 W sputtering power.