中文摘要：

制备了有机紫外光探测器（OUV-PD）,器件结构为ITO/m-MTDATA（30nm）/m-MTDATA：BAlq（40-60nm,1∶1）/BAlq（40nm）/LiF（1nm）/Al（100nm）,并研究了施加Liq、TPBi、Bphen和Zn（4-MeBTZ）2为阴极缓冲层时对器件性能的影响。实验结果表明,OUV-PD光响应与阴极缓冲层厚度和电子传输性能紧密相关,在1.05mW/cm2的波长为365nm UV光照射下,响应度最大值分别达到218mA/W、247mA/W、305mA/W和283mA/W。

英文摘要：

Organic ultraviolet photodetector（OUV-PD）has been specially concerned due to the advantages of wide range of material selection,low cost,flexibility and large-area manufacturing.The OUV-PD with structure of ITO/m-MTDATA（30nm）/m-MTDATA：BAlq（40-60 nm,1∶1）/BAlq（nm 40）/LiF（1nm）/Al（100nm）was prepared.The effects of Liq,TPBi,Bphen and Zn（4-MeBTZ）2as cathode buffer layers on the performance of OUV-PD are studied.The experimental results show that the photoresponse of OUV-PD is closely related to the thickness and electron mobility of cathode buffer layer.Under an illumination of 365 nm UV light with power of 1.05mW/cm2,the maximum values of response are 218mA/W,247mA/W,305mA/W and 283mA/W,respectively.