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Investigation of surface morphology and ion activation ofaluminium implanted 4H-SiC
  • ISSN号：1674-7321
  • 期刊名称：Science China Technological Sciences
  • 时间：2012.4.14
  • 页码：3401-3404
  • 相关项目：HfAlO/4H-SiC MOSFETs功率器件研究
作者： 张玉明|
同期刊论文项目
HfAlO/4H-SiC MOSFETs功率器件研究
期刊论文 13 会议论文 2
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