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Instability of nitrogen doped Sb(2)Te(3) for phase change memory application
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：0
  • 页码：-
  • 相关项目：新型相变材料的设计与优选
作者： Li, Xuelai|Rao, Feng|Song, Zhitang|Zhu, Min|Liu, Weili|Sun, Zhimei|
同期刊论文项目
新型相变材料的设计与优选
期刊论文 35
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