利用电子束曝光法对双层光刻胶进行曝光来制备悬空掩模结构,在此基础上利用电子束蒸发系统采用倾斜角度蒸发法制备铝超导薄膜,采用热氧化法在底层铝膜表面形成氧化铝作为势垒层,制备出铝SIS超导隧道结,并在360mK的情况下对铝结进行了Ⅰ~Ⅴ特性的初步测量.铝隧道结的成功制备为下一步构建超导量子比特器件,研究其量子特性奠定了良好的基础.
Our research task is to fabricate the Al/Al_2O_3/Al tunnel junction using the method of the combination of angled evaporation based on a suspended shadw mask.The I~V characteristics of the Al/Al_2O_3/Al tunnel junction were measured at the temperature of 20mK.Al junction is successfully fabricated,which makes it promising for research in quantum qubits.