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中文摘要：
本文通过在硅衬底发光二极管（LED）薄膜p-GaN表面蒸发不同厚度的Ni覆盖层，将其在N2：O2=4：1的气氛中、400℃-750℃的温度范围内进行退火，在去掉薄膜表面Nj覆盖层之后制备Pt／p-GaN欧姆接触层．实验结果表明：退火温度和Ni覆盖层厚度均对硅衬底GaN基LED薄膜P型欧姆接触有重要影响，Ni覆盖退火能够显著降低P型层中Mg受主的激活温度．经牺牲Ni退火后，P型比接触电阻率随退火温度的升高呈先变小后变大的规律，随Ni覆盖层厚度的增加呈先变小后变大随后又变小的趋势；经过优化后，当Ni覆盖层厚度为1．5nm，退火温度为450℃，Pt与p-GaN比接触电阻率在不需要二次退火的情况下达到6．1×10^-5Ω·cm。．
英文摘要：
Different thick Ni layers are deposited on the GaN-based LED films grown on Si（ 111 ） substrates, then LED films are annealed at 400℃--750 ℃ in the atmosphere of N2： O2 =4： 1. The Pt / p-GaN contact layer is prepared after removing the Ni-capping layer. It is found that annealing temperature and thickness of Ni-capping layer each have an important influence on the p-type contact of GaN-based LED film. The Ni film can significantly reduce the activation temperature of Mg aceeptor of the p-type GaN. The characteristic of p-type contact of Ni-capping sample becomes better first then turns worse with annealing temperature and it become better then turns worse and then better with Ni-eapping thickness. After optimization, the specific contact resistivity of Pt/p-GaN in the ease of no second annealing can reach 6. 1 × 10-5 Ω·cm2, when Ni-eapping layer thickness is 1.5 nm and its annealing temperatune is 450 ℃.
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