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AlN/Si(111)衬底上4H-SiC的CVD外延生长研究
  • ISSN号：1003-353X
  • 期刊名称：《半导体技术》
  • 时间：0
  • 分类：TN304.055[电子电信—物理电子学]
  • 作者机构：[1]南京大学物理系江苏省光电信息功能材料重点实验室
  • 相关基金：国家自然科学基金(60721063);高等学校博士学科点专项基金(20050284004)
作者： 吴军[1], 王荣华[1], 韩平[1], 梅琴[1], 刘斌[1], 谢自力[1], 修向前[1], 张荣[1], 郑有炓[1]
关键词： AlN/Si(111)衬底, 4H-SiC薄膜, 异质外延, 碳硅比
中文摘要：

利用CVD的方法在Al N/Si(111)衬底上成功实现了4H-SiC薄膜的异质外延生长,用高分辨X射线衍射仪(HRXRD)、扫描电子显微镜(SEM)、喇曼散射(Raman scattering)对所得样品的结构特征、表面形貌等进行了表征测量。XRD测量结果显示得到的SiC薄膜具有单一的晶体取向;Raman散射谱线初步表明得到的SiC薄膜为4H型态。衬底温度过低,不利于Si、C原子选择合适的格点位置成键,外延薄膜晶体质量不高;衬底温度过高,H2的刻蚀作用和表面原子的解吸附作用增强,不利于SiC的成核生长。C/Si比过小,薄膜表面会形成Si的小液滴;C/Si比过大,薄膜中会产生Si空位形式的微缺陷。因此,研究表明在Al N/Si(111)衬底上外延4H-SiC的最佳衬底温度为1230~1270℃,较为理想的C/Si比值为1.3。

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期刊信息
  • 《半导体技术》
  • 中国科技核心期刊
  • 主管单位:中国电子科技集团公司
  • 主办单位:中国电子科技集团公司第十三研究所
  • 主编：赵小玲
  • 地址：石家庄179信箱46分箱
  • 邮编：050051
  • 邮箱：informax@heinfo.net
  • 电话：0311-87091339
  • 国际标准刊号：ISSN：1003-353X
  • 国内统一刊号：ISSN：13-1109/TN
  • 邮发代号:18-65
  • 获奖情况:
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  • 被引量:6070