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First-principles simulations of the leakage current in metal-oxide- semiconductor structures caused
  • ISSN号：0031-8965
  • 期刊名称：Physica Status Solidi A-Applications and Materials
  • 时间：0
  • 页码：199-203
  • 语言：英文
  • 相关项目：氢、氧、氮相关缺陷的精细电子结构对下一代GLSI电路性能的影响
作者： Mao, L.F.|Wang, Z.O.|
同期刊论文项目
氢、氧、氮相关缺陷的精细电子结构对下一代GLSI电路性能的影响
期刊论文 30 会议论文 4
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