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Bi4Ti3O12层状铁电薄膜的结构与性能研究
  • 期刊名称：功能材料（2007），5期（38卷），753-755
  • 时间：0
  • 分类：O484.1[理学—固体物理;理学—物理] O484.5[理学—固体物理;理学—物理]
  • 作者机构：[1]电子科技大学微电子与固体电子学院,四川成都610054
  • 相关基金：国家杰出青年基金资助项目（50425207）
  • 相关项目：压电与铁电陶瓷材料
关键词： BIT, 剩余极化, a轴择优, BIT , remanent polarization , α-axis orientation
中文摘要：

采用脉冲激光沉积法（pulsed laser deposition,PLD）,通过改变气氛氧压、衬底温度等工艺参数,在商业化的Pt/TiO2/SiO2/Si衬底上制备了Bi4Ti3O12（BIT）系列薄膜。利用X射线衍射（XRD）表征了薄膜的结构特征;并采用RT2000进行铁电性能参数的测量,以此研究了工艺参数对薄膜结构和铁电性能的影响规律。分析结果表明,调整工艺参数能有效改善BIT薄膜的a轴取向度：气氛氧压越大、衬底温度越高,则薄膜的a轴取向度越高,剩余极化值也就越大。通过上述试验结果得到,在Pt/TiO2/SiO2/Si衬底上制备BIT薄膜的优化条件为氧分压35Pa、衬底温度700℃。在此优化条件下制备的BIT薄膜为a轴择优取向,剩余极化值达到7μC/cm^2。

英文摘要：

By pulsed laser deposition （PLD）, polycrystalline BIT thin films were fabricated on Pt/TiO2/SiO2/Si substrates under different substrate temperatures and oxygen pressures respectively. The impact of technological conditions on the structural and ferroelectric properties was studied. The films were characterized by X-ray diffraction （XRD） and RT2000. The results indicated that technological parameters acts significant effect on the structure and properties of the films. With the increase of substrate temperatures and oxygen pressures respectively,α-axis orientation and remanent polarization Pt, increased. 3SPa, 700℃ were the optimized parameters of BIT film on Pt/TiO2/SiO2/Si. On this condition, polycrystalline thin films preferred a-axis orientation and P, was 7μC/cm^2 , which is the highest P, in the series BIT films of all.

同期刊论文项目
压电与铁电陶瓷材料
期刊论文 58 会议论文 2 著作 1
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