中文摘要：

介绍了一种纳米MOSFET（场效应管）栅电流的统一模型,该模型基于Schrodinger-Poisson方程自洽全量子数值解,特别适用于高k栅介质和多层高k栅介质纳米MOSFET.运用该方法计算了各种结构和材料高k介质的MOSFET栅极电流,并对pMOSFET和nMOSFET高k栅结构进行了分析比较.模拟得出栅极电流与实验结果符合,而得出的优化氮含量有待实验证实.

英文摘要：

A quantum model based on solutions to the Schrodinger-Poisson equations is developed to investigate the device behavior related togate tunneling current for nanoscale MOSFETs with high-k gate stacks. This model can model various MOS device structures with combinations of high-k dielectric materials and multilayer gate stacks,revealing quantum effects on the device performance. Comparisons are made for gate current behavior between nMOSFET and pMOSFET high- k gate stack structures. The results presented are consistent with experimental data, whereas a new finding for an optimum nitrogen content in HfSiON gate dielectric requires further experimental verifications.