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中文摘要：
研究了生长温度和中断时间对AlGaInAs/AlGaAs量子阱外延质量的影响,并使用金属有机化合物汽相沉积（MOCVD）外延生长了AlGaInAs/AlGaAs量子阱和852nm半导体激光器。通过使用反射各向异性谱（RAS）和光致发光谱在线监测和研究了AlGaInAs/AlGaAs界面的外延质量。研究结果表明高温生长可以导致从AlGaInAs量子阱层到AlGaAs势垒层的In析出现象。通过优化生长温度和在AlGaInAs/AlGaAs界面处使用中断时间,可以有效抑制In析出,从而获得AlGaInAs/AlGaAs陡峭界面。使用优化后的外延生长条件,外延生长了整个852nm半导体激光器,使用RAS在线监测了激光器的外延生长过程,可以有效地分辨出不同外延层和生长阶段。
英文摘要：
The influence of the growth temperature and interruption time on the crystal quality of AIGaInAs/AIGaAs quantum well is investigated. The AlGaInAs/AlGaAs quantum well and whole 852 nm laser structures are grown by metal organic chemical vapor deposition （ MOCVD ）. Reflectance anisotropy spectroscopy （ RAS ） and photoluminescence （PL） spectra are applied to measure the AIGaInAs/A1GaAs interfaces crystalline quality. The results show that high growth temperature will lead to indium segregation from A1GaInAs quantum well to A1GaAs barrier. By lowering the growth temperature and using of interruption time between AIGaInAs quantum well and A1GaAs barriers, the indium segregation effect can be effectively suppressed. The AlGaInAs/AlGaAs quantum well shows an abrupt interface and good crystalline quality under this growth conditions. With optimizing growth conditions, whole laser structures are grown. All the epilayer and growth process can be distinguished in situ by RAS transient spectra.
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