位置：成果数据库 > 期刊 > 期刊详情页
Instability of nitrogen doped Sb2Te3 for phase change memory application
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：0
  • 页码：-
  • 相关项目：新型纳米复合相变材料的制备及其在相变存储器中的应用
作者： Li, Xuelai|Rao, Feng|Song, Zhitang|Zhu, Min|Liu, Weili|Sun, Zhimei|
同期刊论文项目
新型纳米复合相变材料的制备及其在相变存储器中的应用
期刊论文 59 专利 17
同项目期刊论文
Stress reduction and performance improvement of phase change memory cell by using Ge2Sb2Te5-TaOx com
High Speed Phase Change Memory Based on SnTe-Doped Ge2Sb2Te5 Material
Improved thermal and electrical properties of nitrogen-doped Ge-rich Ge3Sb2Te5 for phase-change memo
Advantages of SixSb2Te phase-change material and its applications in phase-change random access memo
Sb2Te3-HfO2 composite films for low-power phase change memory application
Phase Change Memory Based on (Sb2Te3)(0.85)-(HfO2)(0.15) Composite Film
Sb2Te3-Ta2O5 nano-composite films for low-power phase-change memory application
Performance improvement of phase-change memory cell with Ge2Sb2Te5-HfO2 composite films
Ge2Sb2Te5 and PbZr0.30Ti0.70O3 composite films for application in phase change random access memory
Ga14Sb86 film for ultralong data retention phase-change memory
Crystallization Process of Amorphous GaSb5Te4 Film for High-Speed Phase Change Memory
Investigation of HfO2 doping on GeTe for phase change memory
Design and Fabrication of Dual-Trench Epitaxial Diode Array for High-Density Phase-Change Memory
Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the cr
Si-Sb-Te materials for phase change memory applications
Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2T
SixSb2Te materials with stable phase for phase change random access memory applications
Scaling properties of phase-change line memory
Sb Rich Ge2Sb5Te5 Alloy for High-Speed Phase Change Random Access Memory Applications
Investigation of CuSb4Te2 alloy for high-speed phase change random access memory applications
An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell
Pseudobinary Al2Te3-Sb2Te3 material for high speed phase change memory application
Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material
用于相变存储器的超低输出纹波电荷泵
Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma
An SPICE model for phase-change memory simulations
基于0．13μm工艺的8Mb相变存储器
一种具有掉电数据保持功能的触发器设计
基于相变存储器器件单元的电流脉冲测试系统
Ge_2Sb_2Te_5的化学机械抛光研究进展
Chemical mechanical planarization of amorphous Ge_2Sb_2Te_5 with a soft pad
基于PCRAM数据页聚簇的缓冲算法
一种滞环恒流LED驱动电路的电流采样电路
Thermal effect of Ge2Sb2Te5 in phase change memory device
大电流负载的片上LDO系统设计